advanced power p-channel enhancement mode electronics corp. power mosfet lower on-resistance bv dss -40v simple drive requirement r ds(on) 13.5m fast switching characteristic i d -65a rohs compliant description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w w/ t stg t j symbol value unit rthj-c thermal resistance junction-case max. 1.4 /w rthj-a thermal resistance junction-ambient max. 62 /w data and specifications subject to change without notice pb free plating product 201107061-1/4 ap6679gs/p-a rating -40 25 -65 0.71 89 -55 to 150 parameter drain-source voltage gate-source voltage continuous drain current, v gs @ 10v continuous drain current, v gs @ 10v -41 pulsed drain current 1 -260 parameter total power dissipation operating junction temperature range storage temperature range -55 to 150 linear derating factor thermal data g d s the advanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. g d s to-263(s) g d s to-220(p) the to-263 package is universally preferred for all commercial- industrial surface mount applications and suited for low voltage applications such as dc/dc converters. the through-hole version (ap6679gp) are available for low-profile applications.
ap6679gs/p- a electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =-250ua -40 - - v b v dss / t j breakdown voltage temperature coefficient reference to 25 , i d =-1ma - -0.02 -v/ r ds(on) static drain-source on-resistance 2 v gs =-10v, i d =-28a - - 13.5 m v gs =-4.5v, i d =-20a - - 20 m v gs(th) gate threshold voltage v ds =v gs , i d =-250ua -0.8 - -2.5 v g fs forward transconductance v ds =-10v, i d =-24a - 24 - s i dss drain-source leakage current (t j =25 o c) v ds =-40v, v gs =0v - - -1 ua drain-source leakage current (t j =150 o c) v ds =-32v, v gs =0v - - -25 ua i gss gate-source leakage v gs = 25 - - na q g total gate charge 2 i d =-16a - 43 70 nc q gs gate-source charge v ds =-32v - 7 - nc q gd gate-drain ("miller") charge v gs =-4.5v - 26 - nc t d(on) turn-on delay time 2 v ds =-20v - 11 - ns t r rise time i d =-16a - 40 - ns t d(off) turn-off delay time r g =3.3 , v gs =-10v - 50 - ns t f fall time r d =0.8 -80- ns c iss input capacitance v gs =0v - 2870 4590 pf c oss output capacitance v ds =-25v - 960 - pf c rss reverse transfer capacitance f=1.0mhz - 740 - pf r g gate resistance f=1.0mhz - 2.5 3.75 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =-20a, v gs =0v - - -1.2 v t rr reverse recovery time i s =-16a, v gs =0v, - 37 - ns q rr reverse recovery charge di/dt=-100a/s - 42 - nc notes: 1.pulse width limited by safe operating area. 2.pulse width < 300us , duty cycle < 2%. 2/4 100
ap6679gs/p- a fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3/4 10 12 14 16 18 20 246810 -v gs , gate-to-source voltage (v) r ds(on) (m ) i d = -20a t c =25 0 40 80 120 160 200 024681012 -v ds , drain-to-source voltage (v) -i d , drain current (a) t c =25 o c -10v -7.0v -5.0v -4.5v v g = -3.0v 0.5 0.7 0.9 1.1 1.3 1.5 -50 0 50 100 150 t j , junction temperature ( o c) -v gs(th) (v) 0 10 20 30 40 50 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -v sd , source-to-drain voltage (v) -i s (a) t j =25 o c t j =150 o c 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d = -28a v g = -10v 0 30 60 90 120 0.0 2.0 4.0 6.0 8.0 10.0 -v ds , drain-to-source voltage (v) -i d , drain current (a) t c =150 o c -10v -7.0v -5.0v -4.5v v g = -3.0v
ap6679gs/p- a fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. transfer characteristics fig 12. gate charge waveform 4/4 100 1000 10000 1 5 9 1317212529 -v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss q v g -4.5v q gs q gd q g charge 0 2 4 6 8 10 12 14 0 20406080100 q g , total gate charge (nc) -v gs , gate to source voltage (v) i d = -16a v ds = -32v 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 1 10 100 1000 0.1 1 10 100 -v ds , drain-to-source voltage (v) -i d (a) 1ms 10ms 100ms 1s dc t c =25 o c single pulse 0 20 40 60 80 0246 -v gs , gate-to-source voltage (v) -i d , drain current (a) t j =150 o c t j =25 o c v ds = -5v
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